Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing

Abstract We report on impurity diffusion in ion implanted AlN layers after thermal annealing. Silicon, tin, germanium, and magnesium ions were into single-crystal Al-polar grown sapphire substrates. By annealing at 1600 °C, silicon atoms diffused the layer, while less change was observed distribution of germanium atoms. Silicon implantation introduced vacancy-related defects. temperatures over 1300 defects reduced, oxygen from substrate due to decomposition. reproducibly achieved silicon-implanted with electrical conductance by controlling temperature concentrations.